We demonstrate the production of organic bottom gate transistors with self-aligned\nelectrodes, using only continuous roll-to-roll (R2R) techniques. The self-alignment allows accurate\n<5 Ã?¼m layer-to-layer registration, which is usually a challenge in high-speed R2R environments as the\nstandard registration methods are limited to the millimeter rangeââ?¬â?or, at best, to tens of Ã?¼m if online\ncameras and automatic web control are utilized. The improved registration enables minimizing the\noverlap between the source/drain electrodes and the gate electrode, which is essential for minimizing\nthe parasitic capacitance. The complete process is a combination of several techniques, including\nevaporation, reverse gravure, flexography, lift-off, UV exposure and development methodsââ?¬â?all\ntransferred to a continuous R2R pilot line. Altogether, approximately 80 meters of devices consisting\nof thousands of transistors were manufactured in a roll-to-roll fashion. Finally, a cost analysis is\npresented in order to ascertain the main costs and to predict whether the process would be feasible\nfor the industrial production of organic transistors.
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